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 (R)
STPR320
ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 3A 200 V 150C 0.99 V 30 ns
FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY DESCRIPTION Low cost single chip rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in F126, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
F126 (JEDEC DO-204AC)
ABSOLUTE MAXIMUM (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Parameter Repetitive peak reverse voltage Tl=60C = 0.5 tp=10ms sinusoidal Value 200 3 30 - 65 to + 150 150 Unit V A A C C
October 1999- Ed:1A
1/5
STPR320
THERMAL RESISTANCE Symbol Rth (j-l) Junction lead (L=5mm) Parameter Value 25 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25C Tj = 100C Tj = 125C Tj = 125C Tj = 25C
Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 %
Min.
Typ. 0.2 0.8 0.95
Max. 10 0.5 0.99 1.20 1.25
Unit A mA V
VR = VRRM IF = 3 A IF = 6 A IF = 6 A
To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.070 x IF2(RMS)
RECOVERY CHARACTERISTICS Symbol trr tfr VFP Tj = 25C Tj = 25C Tj = 25C Test conditions IF = 0.5A IR = 1A IF = 3A VFR = 1.1 x VF max IF = 3A Irr = 0.25A dIF/dt = 50 A/s dIF/dt = 50 A/s 20 3 Min. Typ. Max. 30 Unit ns ns V
Fig. 1 : Average forward power dissipation versus average forward current.
Fig. 2 : Peak current versus form factor.
2/5
STPR320
Fig. 3: Average current versus ambient temperature( : 0.5) * circuit board e (Cu) = 35m, S (cu) = 12mm2 L(LEADS ) = 20mm
IF(av) (A) 3.5
=0.5
T
Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 20 18 16 14
tp
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Rth( j-a)=90 C/w *
o
IM
Rth(j-a)=Rth(j-l)
=tp/T
12 10 8 6 4 2
t(s)
=0.5
Tl=25 o C
Tl=60 C
o
25
50
75
100
125
150
0 0.001
0.01
0.1
1
10
Fig. 5: Relative variation of thermal transient impedance junction to case versus pulse duration.
K=Zth(j-l)/Rth(j-l) 1 = 0.5 = 0.2
Fig. 6: Forward voltage drop versus forward current (maximum values).
0.1
= 0.1
T
SINGLE PULSE tp(s) 0.01 0.1
=tp/T tp
0.01 0.001
1
10
Fig 7: Junction capacitance versus reverse voltage applied (typical values).
Fig. 8: Recovery charges versus dIF/dt.
H
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STPR320
Fig. 9: Peak reverse current versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature .
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STPR320
PACKAGE MECHANICAL DATA F126
C
A
C
D
D
B
DIMENSIONS REF. Millimeters Min.
A B C D 6.05 2.95 26 0.76 0.81
Inches Typ. Max.
0.244 0.118 0.250 0.120 1.220 0.032 0.034
Typ. Max. Min.
6.20 3.00 6.35 3.05 31 0.86 0.238 0.116 1.024 0.030
Ordering type STPR320
Marking STPR320
Package F126
Weight 0.4g
Base qty 1000
Delivery mode Ammopack
Cooling method : by conduction (C) Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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